If you're wondering how much you'd have if you'd invested $10,000 in Navitas Semiconductor (NASDAQ: NVTS) stock two years ago ...

Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are a type of field-effect transistors (FETs) designed to operate at very high frequencies with low noise. As such, they have ...

Need a backup wall charger for your Apple iPhone 16 or Nintendo Switch 2? Target just dropped the price on the Anker Ace 45W ...

And, a hype alert. A one millimeter wavelength corresponds to approximately 300 GHz, not 28 GHz. However industry parlance "defines" millimeter wavelengths as being from 1 to 10 millimeters. 10 mm ...

The PCIM Asia Shanghai Conference returns to Shanghai this September. The 2025 programme will unite industry leaders, technical ...

Silicon carbide chips had taken the lead, operating at 600° C. But gallium nitride, which possesses unique features that make ...

The Meteor missile, a top BVR weapon, features a throttleable ramjet engine, active radar seeker, and two-way data link for ...

Refined sputtering method could enable large-scale production of Scandium thin films for GaN transistors with higher carrier ...

Wolfspeed faces bankruptcy risk and heavy cash burn. Learn about its core technology, restructuring efforts, and market ...

AGNIT Semiconductors Private Limited, India's only vertically integrated Gallium Nitride (GaN) semiconductor startup, has ...

Gallium nitride transistors rely on a ‘two-dimensional electron gas’ for their high speed – a flat heterojunction between GaN and AlGaN where electrons can move extremely quickly – they are ‘high ...

AGNIT Semiconductors Private Limited, a leading Indian GaN semiconductor startup, has been honored with NASSCOM's Deep Tech ...